Abstract

In this report, the development of solution-processed sol-gel derived un-doped and rare earth yttrium (Y) doped ZnO (Y-ZnO) thin films is presented. Both undoped and Y-ZnO thin films exhibited a highly preferred (002) c-axis orientation peak. The Y-ZnO thin film crystallinity was considerably improved with an increase of (002) peak intensity and grain size. O1s spectra of X-ray photoelectron spectroscopy (XPS) showed less number of oxygen vacancy-related defects present in the Y-ZnO as compared to undoped ZnO. The fabricated thin film transistor (TFT) based on un doped ZnO exhibited an on/off current ratio of 102 and field effect mobility of 0.0052 cm2 V-1 s-1 and large threshold voltage respectively. However, Y-ZnO-based TFT showed an on/off current ratio exceeding 102, and electron mobility was achieved at 0.011 cm2 V-1 s-1.

Keywords

ZnO Thin Films, Sol-Gel Method, Yttrium Doping, Thin Film Transistor (TFT), X-ray Diffraction (XRD), Electron Mobility, Rare-Earth Doping.

Citation (in IEEE Format)

Bhawna, A. Kumar, R. Singh, K. Upadhaya, D. Lee, and M. Kumar, “An experimental investigation of sol-gel derived undoped and rare-earth yttrium doped ZnO thin films along with their transistors,” Int. J. Multidiscip. Innov. Res., vol. 6, no. 2, pp. 98–105, Apr. 2026.